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v23990-p829-f-pm preliminary datasheet flowpack 1 3rd gen 1200v/50a compact flow1 housing trench fieldstop igbt4 technology compact and low inductance design aln substrate for improved performance built-in ntc motor drive power generation ups v23990-p829-f tj=25c, unless otherwise specified parameter symbol value unit inverter transistor t h =80c 50 t c =80c t h =80c 198 t c =80c t sc t j 150c 10 s v cc v ge =15v 800 v inverter diode t h =80c 50 t c =80c t h =80c 143 t c =80c thermal properties 175 maximum junction temperature c 1200 20 w a collector-emitter break down voltage repetitive peak collector current dc collector current v ce i cpulse i c 175 v 1200 i frm t j max repetitive peak forward current features flow1 housing target applications schematic types maximum ratings condition a v c v v rrm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings peak repetitive reverse voltage gate-emitter peak voltage t j =t j max t j =25c t j =t j max t j =t j max t p limited by t j max w power dissipation per diode p tot dc forward current a t j =t j max t p limited by t j max a i f c storage temperature t stg -40?+125 c 150 100 t op operation temperature under switching condition -40?+150 copyright by vincotech 1 revision: 2
v23990-p829-f-pm preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition insulation properties v is t=1min 4000 v dc min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance copyright by vincotech 2 revision: 2
v23990-p829-f-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5,00 5,80 6,50 tj=150c tj=25c 1,60 1,93 2,30 tj=150c 2,35 tj=25c 0,02 tj=150c tj=25c 650 tj=150c tj=25c 96 tj=150c 101 tj=25c 17 tj=150c 24 tj=25c 214 tj=150c 281 tj=25c 87 tj=150c 122 tj=25c 2,70 tj=150c 4,21 tj=25c 2,74 tj=150c 4,53 thermal resistance chip to heatsink per chip r thjh thermal foil thickness=76um kunze foil ku-alf5 0,48 k/w tj=25c 1,4 1,83 2,3 tj=150c 1,80 tj=25c 81 tj=150c 85 tj=25c 139 tj=150c 316 tj=25c 4,80 tj=150c 9,71 di(rec)max tj=25c 4803 /dt tj=150c 1209 tj=25c 1,79 tj=150c 3,97 thermal resistance chip to heatsink per chip r thjh thermal foil thickness=76um kunze foil ku-alf5 0,66 k/w a/ s mws k mw 2,6 %/k k? 5,8 210 3530 4,7 tj=25c 50 15 0 0 15 20 15 t d(on) c rss c ies q rr t r t d(off) t rr q gate peak reverse recovery current reverse recovery time reverse recovered energy peak rate of fall of recovery current reverse recovered charge 15 v f i rrm r gint i ges v ge(th) i ces collector-emitter saturation voltage v ce(sat) input capacitance output capacitance reverse transfer capacitance diode forward voltage gate charge c oss value characteristic values conditions 50 vcc=960 vce=vge rgon=8 ? e off erec t f e on turn-off energy loss per pulse inverter diode collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current turn-on energy loss per pulse integrated gate resistor inverter transistor gate emitter threshold voltage 50 c a 600 25 0 tj=25c tj=25c b-value b (25/100) tol. 3% power dissipation given epcos-typ p r100=435 ? deviation of r100 d r/r thermistor rated resistance r 25 tol. 5% rgon=8 ? rgoff=8 ? 50 50 0,0017 f=1mhz 600 1200 tj=25c 4 160 205 2770 240 tc=100c tj=25c 4,2 ? ns v ma nc pf v v na mws ns copyright by vincotech 3 revision: 2
v23990-p829-f-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fred typical transfer characteristics typical diode forward current as ic = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v output inverter typical output characteristics 0 30 60 90 120 150 012345 v ce (v) ic (a) 0 10 20 30 40 50 024681012 v ge (v) i c (a) tj = 25c tj = tj max -25c 0 30 60 90 120 150 0 0,8 1,6 2,4 3,2 4 v f (v) i f (a) tj = 25c tj = tj ma x -25c 0 30 60 90 120 150 012345 v ce (v) ic (a) c opyright by vincotech 4 revision: 2
v23990-p829-f-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r goff = 8 ? figure 7 output inverter igbt figure 8 output inverter igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e r e c = f ( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 600 v output inverter application v ce = 600 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a output inverter e on e off e on: e off 0 2 4 6 8 10 0 102030405060708090100 i c (a) e (mws) e off e on e on e off 0 2 4 6 8 10 0 8 16 24 32 40 r g ( ) e (mws) e rec e rec 0 1 2 3 4 5 6 0 102030405060708090100 i c (a) e (mws) e rec e rec 0 1 2 3 4 5 0 8 16 24 32 40 r g ( ) e (mws) c opyright by vincotech 5 revision: 2
v23990-p829-f-pm preliminary datasheet figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r goff = 8 ? figure 11 output inverter fred figure 12 output inverter fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v output inverter t doff t f t don t r 0,001 0,01 0,1 1 0 102030405060708090100 ic (a) t ( s) t rr t rr 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0 8 16 24 32 40 r gon ( ) t rr ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 8 16 24 32 40 r g ( ) t ( s) t rr t rr 0 0,07 0,14 0,21 0,28 0,35 0,42 0 102030405060708090100 i c (a) t rr ( s) c opyright by vincotech 6 revision: 2
v23990-p829-f-pm preliminary datasheet figure 13 output inverter fred figure 14 output inverter fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(ic) q rr = f(r gon ) at at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v figure 15 output inverter fred figure 16 output inverter fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(ic) i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v output inverter i rrm i rrm 0 30 60 90 120 150 0 8 16 24 32 40 r gon ( ) irr m (a) q rr q rr 0 2 4 6 8 10 12 0 8 16 24 32 40 r gon ( ) q rr ( c) i rrm i rrm 0 20 40 60 80 100 120 0 102030405060708090100 i c (a) irr m (a) q rr q rr 0 2 4 6 8 10 12 14 0 102030405060708090100 i c (a) q rr ( c) c opyright by vincotech 7 revision: 2
v23990-p829-f-pm preliminary datasheet figure 17 output inverter fred figure 18 output inverter fred typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di0/dt,direc/dt = f(ic) di0/dt,direc/dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v figure 19 output inverter igbt figure 20 output inverter fred igbt transient thermal impedance f red transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(tp) z thjh = f(tp) at at d = tp / t d = tp / t r thjh = 0,48 k/w r thjh = 0,66 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,09 1,18e+00 0,02 9,51e+00 0,20 1,13e-01 0,08 1,19e+00 0,12 3,32e-02 0,17 1,35e-01 0,04 2,20e-03 0,26 2,81e-02 0,03 3,13e-04 0,08 2,16e-03 0,06 3,03e-04 output inverter t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di0/dt direc/dt 0 2000 4000 6000 8000 10000 12000 14000 0 8 16 24 32 40 r gon ( ) di rec / dt (a/ s) di 0 /dt di rec /dt 0 1000 2000 3000 4000 5000 6000 0 102030405060708090100 i c (a) di rec / dt (a/ s) c opyright by vincotech 8 revision: 2
v23990-p829-f-pm preliminary datasheet figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 c t j = 175 c v ge =15 v figure 23 output inverter fred figure 24 output inverter fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 c t j = 175 c output inverter 0 50 100 150 200 250 300 350 400 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i c (a) 0 50 100 150 200 250 300 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i f (a) c opyright by vincotech 9 revision: 2
v23990-p829-f-pm preliminary datasheet figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(qg) at at d = single pulse i c = 50 a th = 80 oc v ge = 15 v tj = t jmax oc output inverter v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100u 1m 10m 100 m d c 10 0 10 3 10 u 0 5 10 15 0 50 100 150 200 250 qg (nc) v ge (v) 240 v 960 v c opyright by vinc otech 10 revision: 2
v23990-p829-f-pm preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 1000 2000 3000 4000 5000 25 50 75 100 125 t (c) r/ ? c opyright by vinc otech 11 revision: 2
v23990-p829-f-pm preliminary datasheet t j 150 c r g on 8 ? r goff 8 ? figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of tdoff, teoff turn-on switching waveforms & definition of tdon, teon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 50 a i c (100%) = 50 a t doff = 0,28 s t don = 0,10 s t eoff = 0,70 s t eon = 0,33 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 50 a i c (100%) = 50 a t f = 0,12 s t r = 0,02 s switching definitions output inverter general conditions = = = i c 1% u ce 90% u ge 90% -40 -20 0 20 40 60 80 100 120 140 -0,2 0 0,2 0,4 0,6 0,8 1 time (us) % t doff t eoff uce ic u ge ic 10% uge 10% t don u ce3% -20 20 60 100 140 180 220 260 300 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % ic uce t eon uge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,2 0,25 0,3 0,35 0,4 0,45 0,5 time (us) % uce ic t f i c10% ic90% -20 20 60 100 140 180 220 260 300 2,9 3 3,1 3,2 3,3 3,4 time(us) % tr uce ic c opyright by vincotech 12 revision: 2
v23990-p829-f-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 30,10 kw p on (100%) = 30,10 kw e off (100%) = 4,53 mj e on (100%) = 4,21 mj t eoff = 0,70 s t eon = 0,33 s figure 7 output inverter fred figure 8 output inverter igbt gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r v geoff = -15 v v d (100%) = 600 v v geon = 15 v i d (100%) = 50 a v c (100%) = 600 v i rrm (100%) = -85 a i c (100%) = 50 a t rr = 0,32 s q g = 316,87 nc switching definitions output inverter ic 1% uge90% -20 0 20 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 0,8 1 time (us) % poff eoff teoff u ce3% u ge10% -20 20 60 100 140 180 220 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -250 -100 50 200 350 500 qg (nc) uge (v) i rrm 10% i rrm 90% i rrm 100% trr -200 -160 -120 -80 -40 0 40 80 120 2,9 3,1 3,3 3,5 3,7 time(us) % id ud fitted c opyright by vincotech 13 revision: 2
v23990-p829-f-pm preliminary datasheet figure 9 output inverter fred figure 10 output inverter fred turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )( t erec = integrating time for e rec ) i d (100%) = 50 a p rec (100%) = 30,10 kw q rr (100%) = 9,71 c e rec (100%) = 3,97 mj t qint = 0,80 s t erec = 0,80 s switching definitions output inverter tqint -200 -150 -100 -50 0 50 100 150 2,9 3,1 3,3 3,5 3,7 3,9 4,1 time(us) % id q r r -20 0 20 40 60 80 100 120 2,9 3,1 3,3 3,5 3,7 3,9 4,1 time(us) % p rec erec te rec c opyright by vincotech 14 revision: 2
v23990-p829-f-pm preliminary datasheet outline pinout package outline and pinout c opyright by vincotech 15 revision: 2
v23990-p829-f-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. c opyright by vincotech 16 revision: 2

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